Samuel Kim

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz

Yan Tang, K. Shinohara, D. Regan et al. · IEEE Electron Device Letters · 2015 · 297 citations

Engineering, Electrical Engineering, Materials Science +17

Modeling and analysis for thermal management in gallium oxide field-effect transistors

Chao Yuan, Yuewei Zhang, Robert H. Montgomery et al. · Journal of Applied Physics · 2020 · 73 citations

Engineering, Electrical Engineering, Materials Science +17

Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers

Daniel Shoemaker, Mohamadali Malakoutian, Bikramjit Chatterjee et al. · IEEE Transactions on Components Packaging and Manufacturing Technology · 2021 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis and characterization of thermal transport in GaN HEMTs on Diamond substrates

David Altman, Matthew Tyhach, James W. McClymonds et al. · 2014 · 47 citations

Engineering, Electrical Engineering, Materials Science +17

Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic R_on E/D-mode GaN HEMTs

Joel Wong, K. Shinohara, A. Corrion et al. · IEEE Electron Device Letters · 2016 · 43 citations

Engineering, Electrical Engineering, Materials Science +17