Yilong Hao

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Ye Wang, Maojun Wang, Bing Xie et al. · IEEE Electron Device Letters · 2013 · 178 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +15

The compatibility of ZnO piezoelectric film with micromachining process

Tao Xu, Guoying Wu, Guobing Zhang et al. · Sensors and Actuators A Physical · 2003 · 101 citations

Materials Science, Engineering, Microfabrication +4

900 V/1.6 <inline-formula> <tex-math notation="TeX">${\rm m}\Omega\cdot{\rm cm}^{2}$ </tex-math></inline-formula> Normally Off <inline-formula> <tex-math notation="TeX">${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ </tex-math></inline-formula> MOSFET on Silicon Substrate

Maojun Wang, Ye Wang, Chuan Zhang et al. · IEEE Transactions on Electron Devices · 2014 · 83 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +11

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

Maojun Wang, Dawei Yan, Chuan Zhang et al. · IEEE Electron Device Letters · 2014 · 69 citations

Semiconductors, Soft Switched, Electrical Engineering +14

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10¹⁰ High On/Off Current Ratio and Low Specific On-Resistance

Yue Li, Maojun Wang, Ruiyuan Yin et al. · IEEE Electron Device Letters · 2020 · 69 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14