Dawei Yan

On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

Dawei Yan, Hai Lu, Dongsheng Cao et al. · Applied Physics Letters · 2010 · 143 citations

Semiconductors, Polarization Effect, Electrical Engineering +13

The investigation of NbO ₂ and Nb ₂ O ₅ electronic structure by XPS, UPS and first principles methods

Wei‐Bin Zhang, Weidong Wu, Xueming Wang et al. · Surface and Interface Analysis · 2013 · 137 citations

Atomic-layer soft plasma etching of MoS2

Shaoqing Xiao, Peng Xiao, Xuecheng Zhang et al. · Scientific Reports · 2016 · 118 citations · Full text

Forward tunneling current in GaN-based blue light-emitting diodes

Dawei Yan, Hai Lu, Dunjun Chen et al. · Applied Physics Letters · 2010 · 87 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

Maojun Wang, Dawei Yan, Chuan Zhang et al. · IEEE Electron Device Letters · 2014 · 69 citations

Semiconductors, Soft Switched, Electrical Engineering +14