A. Crespo - Concepedia

Author

A. Crespo

University of Florida

Also Known As

A. Crespo

Publications

441

Citations

H-Index

Concepts

All Affiliations

University of Florida Wright-Patterson Air Force Base United States Air Force Research Laboratory

About

A. Crespo is an author at University of Florida specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	436
2	Applied Physics	8	8	436
3	Electrical Engineering	8	8	436
4	Chemical Engineering	1	1	55
5	Materials Engineering	1	1	47

A. Crespo

Publications

436

Citations

H-Index

Page 1

	Year	Citations
AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation R. Mehandru, B. Luo, J. Kim, Applied Physics Letters SemiconductorsOxide HeterostructuresElectrical EngineeringElectronic DevicesGate Oxide	2003	141
Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects Eric R. Heller, A. Crespo Microelectronics Reliability Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2007	113
Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors Hung-Ta Wang, B. S. Kang, F. Ren, Applied Physics Letters Room TemperatureElectrical EngineeringChemical EngineeringEngineeringSemiconductor Device	2005	55
Effects of Sc<sub>2</sub>O<sub>3</sub> and MgO passivation layers on the output power of AlGaN/GaN HEMTs J. Gillespie, Robert Fitch, J. Sewell, IEEE Electron Device Letters Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2002	47
Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors B. S. Kang, R. Mehandru, S. Kim, Applied Physics Letters SemiconductorsHydrogen-induced Reversible ChangesElectrical EngineeringElectronic DevicesEngineering	2004	32
Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors Neil Moser, J. Gillespie, G. D. Via, Applied Physics Letters Interdevice Isolation CurrentsActivation EnergyElectrical EngineeringWide-bandgap SemiconductorEngineering	2003	19
Comparison of passivation layers for AlGaN/GaN high electron mobility transistors Robert Fitch, Dennis E. Walker, Kelson D. Chabak, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringNanoelectronics	2011	16
Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors Lu Liu, F. Ren, S. J. Pearton, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	2011	13

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