T.P. Ma

Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application

Xiao Sun, Bing Sun, Lifeng Liu et al. · IEEE Electron Device Letters · 2009 · 97 citations

Engineering, Materials Engineering, Materials Science +17

Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs

N.-Q. Zhang, Brendan Moran, Steven P. DenBaars et al. · 2002 · 92 citations

Engineering, Electrical Engineering, Materials Science +17

Band-Engineered Low PMOS V<inf>T</inf> with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme

H. R. Harris, Pankaj Kalra, Prashant Majhi et al. · 2007 · 36 citations

Engineering, Electrical Engineering, Materials Science +15

Evidence for

Yasushiro Nishioka, E.F. da Silva, T.P. Ma · IEEE Transactions on Nuclear Science · 1988 · 24 citations

Engineering, Electrical Engineering, Materials Science +16

Transconductance in nitride-gate or oxynitride-gate transistors

M. Khare, X.W. Wang, T.P. Ma · IEEE Electron Device Letters · 1999 · 23 citations

Engineering, Electrical Engineering, Materials Science +17