Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <formula formulatype="inline"><tex Notation="TeX">$\hbox{Al}/\hbox{CeO}_{x}/\hbox{Pt}$</tex></formula> devices with nonstoichiometric <formula formulatype="inline"><tex Notation="TeX">$\hbox{CeO}_{x}\ (\hbox{1.5} ≪ x ≪ \hbox{2})$</tex> </formula> films were fabricated. The unique resistive switching (RS) behaviors for resistive random access memory applications, including stable and sharp bipolar RS processes and a multilevel and self-stop set process without current compliance and without excessive requirement on a high-voltage electroforming process, were demonstrated. A multifilament switching model based on the distribution characteristics of oxygen vacancies in <formula formulatype="inline"><tex Notation="TeX">$\hbox{CeO}_{x}$</tex></formula> films is proposed to explain the observed RS behaviors. </para>