Ruqi Han

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

Nuo Xu, Lifeng Liu, Xiao Wei Sun et al. · Applied Physics Letters · 2008 · 372 citations

Set Process, Non-volatile Memory, Electrical Engineering +15

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

Haowei Zhang, Lifeng Liu, Bin Gao et al. · Applied Physics Letters · 2011 · 203 citations

Materials Science, Oxygen Vacancy Filaments, Electrical Engineering +15

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

Bin Gao, Bing Sun, Haowei Zhang et al. · IEEE Electron Device Letters · 2009 · 175 citations

Spintronics, Electrical Engineering, Non-volatile Memory +13

Ionic doping effect in ZrO2 resistive switching memory

Haowei Zhang, Bin Gao, Bing Sun et al. · Applied Physics Letters · 2010 · 172 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Improved Uniformity of Resistive Switching Behaviors in HfO[sub 2] Thin Films with Embedded Al Layers

Shimeng Yu, Bin Gao, Haibo Dai et al. · Electrochemical and Solid-State Letters · 2009 · 129 citations

Engineering, Resistive Switching Behaviors, Embedded Al Layers +17