Improved Uniformity of Resistive Switching Behaviors in HfO[sub 2] Thin Films with Embedded Al Layers

Abstract

A technical solution is presented to improve the uniformity of -based resistive switching memory by embedding thin Al layers between and electrode layers. Compared with those pure devices, a remarkably improved uniformity of switching parameters such as forming voltages, set voltages, and resistances in high/low states was demonstrated in the devices with embedded Al layers. Al atoms are assumed to diffuse into thin films and are intended to localize oxygen vacancies due to reduced oxygen vacancy formation energy, thus stabilizing the generation of conductive filaments, which helps improve the resistive switching uniformity.