R. Pazirandeh

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

G.J. Riedel, James W. Pomeroy, K.P. Hilton et al. · IEEE Electron Device Letters · 2009 · 77 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance

A. Manoi, James W. Pomeroy, R. Lossy et al. · Solid-State Electronics · 2010 · 34 citations

Electrical Engineering, Engineering, Nanoelectronics +9

Influence of GaN cap on robustness of AlGaN/GaN HEMTs

Ponky Ivo, A. Glowacki, R. Pazirandeh et al. · 2009 · 27 citations

Electrical Engineering, Engineering, Gan Hemts +9

High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 μm SiGe:C BiCMOS technology

K.‐E. Ehwald, B. Heinemann, Wilhelm Roepke et al. · 2002 · 12 citations

Low-power Electronics, Electrical Engineering, Engineering +12