Jacques Faguet - Concepedia

Author

Jacques Faguet

Centre National de la Recherche Scientifique

Also Known As

Faguet, Jacques, J P Faguet, J. Faguet, Jacques Faguet

Publications

311

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Université d'Orléans Groupe de Recherches sur l'Energétique des Milieux Ionisés Center for Nanoscale Science and Technology Institut des Matériaux Jean Rouxel

About

Jacques Faguet is an author at Centre National de la Recherche Scientifique specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	144
2	Applied Physics	5	5	110
3	Chemical Engineering	5	5	110
4	Chemistry	4	4	76
5	Computer Engineering	1	1	24

Jacques Faguet

Publications

236

Citations

H-Index

Page 1

	Year	Citations
Rapid atomic layer etching of Al2O3 using sequential exposures of hydrogen fluoride and trimethylaluminum with no purging David R. Zywotko, Jacques Faguet, Steven M. George Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceMaterials EngineeringChemical EngineeringSequential ExposuresEngineering	2018	41
Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma Gaëlle Antoun, Philippe Lefaucheux, Thomas Tillocher, Applied Physics Letters EngineeringAtomic Layer EtchingVacuum DeviceC4f8 PhysisorptionSilicon On Insulator	2019	34
Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption Gaëlle Antoun, Thomas Tillocher, Philippe Lefaucheux, Scientific Reports	2021	32
Monolithic Circuits for 12 GHz Direct Broadcasting Satellite Reception C. Kermarrec, Peter Harrop, C. Tsironis, Microwave CircuitsElectrical EngineeringDb GainEngineeringRf Semiconductor	2005	24
The role of physisorption in the cryogenic etching process of silicon Gaëlle Antoun, Rémi Dussart, Thomas Tillocher, Japanese Journal of Applied Physics	2019	21
Quasi <i>In Situ</i> XPS on a SiO <sub>x</sub> F <sub>y</sub> Layer Deposited on Silicon by a Cryogenic Process Gaëlle Antoun, Aurélie Girard, Thomas Tillocher, ECS Journal of Solid State Science and Technology	2022	16
Initiated‐Chemical Vapor Deposition of Polymer Thin Films: Unexpected Two‐Regime Growth Laetitia Bonnet, Bruce Altemus, Riccardo Scarazzini, Macromolecular Materials and Engineering EngineeringIcvd GrowthPolymer NanotechnologyNanostructured PolymerPolymer Nanocomposites	2017	13
Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas Gaëlle Antoun, Thomas Tillocher, Aurélie Girard, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films	2022	13
ZrO<sub>2</sub> Monolayer as a Removable Etch Stop Layer for Thermal Al<sub>2</sub>O<sub>3</sub> Atomic Layer Etching Using Hydrogen Fluoride and Trimethylaluminum David R. Zywotko, Omid Zandi, Jacques Faguet, Chemistry of Materials Materials ScienceMaterials EngineeringChemical EngineeringOxide HeterostructuresEngineering	2020	12
Elucidating the DEP phenomena using a volumetric polarization approach with consideration of the electric double layer Yu Zhao, Jozef Brčka, Jacques Faguet, Biomicrofluidics ElectrohydrodynamicsEngineeringDep PhenomenaVolumetric Polarization ApproachElectric Double Layer	2017	10

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