Gaëlle Antoun

Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma

Gaëlle Antoun, Philippe Lefaucheux, Thomas Tillocher et al. · Applied Physics Letters · 2019 · 37 citations

Natural Sciences, Materials Engineering, Materials Science +14

Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

Gaëlle Antoun, Thomas Tillocher, Philippe Lefaucheux et al. · Scientific Reports · 2021 · 37 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +15

Cryogenic etching of silicon compounds using a CHF3 based plasma

Rémi Dussart, Rim Ettouri, J. Nos et al. · Journal of Applied Physics · 2023 · 30 citations · Full text

Engineering, Materials Engineering, Materials Science +17

The role of physisorption in the cryogenic etching process of silicon

Gaëlle Antoun, Rémi Dussart, Thomas Tillocher et al. · Japanese Journal of Applied Physics · 2019 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +17

Quasi <i>In Situ</i> XPS on a SiO _x F _y Layer Deposited on Silicon by a Cryogenic Process

Gaëlle Antoun, Aurélie Girard, Thomas Tillocher et al. · ECS Journal of Solid State Science and Technology · 2022 · 18 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +15