Petri I. Räisänen

Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources

Mikko Ritala, Kaupo Kukli, Antti Rahtu et al. · Science · 2000 · 483 citations

Natural Sciences, Materials Engineering, Materials Science +17

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

M. L. Green, M.-Y. Ho, B. Busch et al. · Journal of Applied Physics · 2002 · 279 citations

Natural Sciences, Materials Engineering, Materials Science +17

Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition

M.-Y. Ho, Hao Gong, G. D. Wilk et al. · Journal of Applied Physics · 2003 · 182 citations

Natural Sciences, Materials Engineering, Materials Science +17

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

M.-Y. Ho, Hao Gong, G. D. Wilk et al. · Applied Physics Letters · 2002 · 103 citations

Natural Sciences, Materials Engineering, Materials Science +17

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices

Alessandro Grossi, Eduardo Pérez, Cristian Zambelli et al. · Scientific Reports · 2018 · 43 citations · Full text

Engineering, Electrical Engineering, Materials Science +17