Olle Axelsson

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

Olle Axelsson, Sebastian Gustafsson, Hans Hjelmgren et al. · IEEE Transactions on Electron Devices · 2015 · 78 citations

Trapping Effects, Wide-bandgap Semiconductor, Engineering +16

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiN_<i>x</i> Grown by Low Pressure Chemical Vapor Deposition

Tongde Huang, Anna Malmros, Johan Bergsten et al. · IEEE Electron Device Letters · 2015 · 30 citations

Materials Engineering, Semiconductors, Electrical Engineering +13

Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise Amplifiers

Olle Axelsson, Niklas Billström, Niklas Rorsman et al. · IEEE Microwave and Wireless Components Letters · 2015 · 27 citations

Electrical Engineering, Engineering, Rf Semiconductor +10

Fabrication and Characterization of Thin-Barrier $ \hbox{Al}_{0.5}\hbox{Ga}_{0.5}\hbox{N/AlN/GaN}$ HEMTs

Jonathan Felbinger, Martin Fagerlind, Olle Axelsson et al. · IEEE Electron Device Letters · 2011 · 12 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +11

The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs

Olle Axelsson, Mattias Thorsell, Kristoffer Andersson et al. · IEEE Transactions on Device and Materials Reliability · 2014 · 11 citations

Forward Gate, Wide-bandgap Semiconductor, Electrical Engineering +10