A. Khachapuridze

The K2S2O8–KOH photoetching system for GaN

J.L. Weyher, F.D. Tichelaar, Dennis H. van Dorp et al. · Journal of Crystal Growth · 2010 · 63 citations

Engineering, Materials Engineering, Materials Science +11

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

M. Siekacz, Marta Sawicka, Henryk Turski et al. · Journal of Applied Physics · 2011 · 48 citations

Engineering, Materials Science, Physics +17

Spin Selection Rules in Radiative and Nonradiative Recombination Processes in Bulk Crystals and in Thin Films of II-VI Compounds

M. Godlewski, V.Yu. Ivanov, A. Khachapuridze et al. · physica status solidi (b) · 2002 · 30 citations

Natural Sciences, Materials Science, Magnetic Materials +12

Lateral Control of Indium Content and Wavelength of III–Nitride Diode Lasers by Means of GaN Substrate Patterning

M. Sarzyński, T. Suski, G. Staszczak et al. · Applied Physics Express · 2012 · 27 citations

Engineering, Materials Science, Physics +17

Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds

Tomasz Sochacki, Mikolaj Amilusik, J.L. Weyher et al. · Japanese Journal of Applied Physics · 2014 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +17