The K2S2O8–KOH photoetching system for GaN

Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

C. Youtsey, Lucia Romano, I. Adesida · Applied Physics Letters · 1998 · 228 citations

Engineering, Materials Engineering, Materials Science +17

Highly anisotropic photoenhanced wet etching of n-type GaN

C. Youtsey, I. Adesida, G. E. Bulman · Applied Physics Letters · 1997 · 208 citations

Engineering, Materials Engineering, Materials Science +17

Recent advances in defect-selective etching of GaN

J.L. Weyher, Paul D. Brown, Jean‐Luc Rouvière et al. · Journal of Crystal Growth · 2000 · 133 citations

Engineering, Materials Engineering, Materials Science +14

Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution

J. A. Bardwell, J. B. Webb, H. Tang et al. · Journal of Applied Physics · 2001 · 123 citations

Natural Sciences, Materials Engineering, Materials Science +17

Orthodox etching of HVPE-grown GaN

J.L. Weyher, Sorin Lazar, Z. Liliental‐Weber et al. · Journal of Crystal Growth · 2007 · 122 citations · Full text

Engineering, Materials Engineering, Materials Science +13