N. Hecking

Model of temperature dependent defect interaction and amorphization in crystalline silicon during ion irradiation

N. Hecking, Klaus Heidemann, E. te Kaat · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1986 · 159 citations

Ion Implantation, Crystalline Silicon, Physics +6

High energy Au-implantation into silicon: Radiation damage and microscopical distribution of implanted atoms

J.K.N. Lindner, N. Hecking, E. te Kaat · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1987 · 26 citations

Materials Science, Ion Implantation, Engineering +10

Dynamic monte carlo simulation of high dose effects during ion bombardment

A. Schönborn, N. Hecking, E.H. Te Kaat · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1989 · 22 citations

Engineering, Physics, Monte Carlo +9

Ranges and electronic stopping powers of 1–24 MeV 12C and 14N ions in Si targets from optical reflectivity measurements on bevelled samples

U. Bussmann, N. Hecking, Klaus Heidemann et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1986 · 17 citations

Engineering, Bevelled Samples, Physics +8

Refractive index profile measurement techniques by reflectivity profiling: vidicon imaging, beam scanning, and sample scanning

J. Steffen, A. Neyer, E. Voges et al. · Applied Optics · 1990 · 14 citations