N. Hecking

Model of temperature dependent defect interaction and amorphization in crystalline silicon during ion irradiation

N. Hecking, Klaus Heidemann, E. te Kaat · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1986 · 160 citations

Natural Sciences, Materials Engineering, Materials Science +16

High energy Au-implantation into silicon: Radiation damage and microscopical distribution of implanted atoms

J.K.N. Lindner, N. Hecking, E. te Kaat · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1987 · 26 citations

Engineering, Materials Engineering, Materials Science +16

Dynamic monte carlo simulation of high dose effects during ion bombardment

A. Schönborn, N. Hecking, E.H. Te Kaat · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1989 · 22 citations

Medicine, Nuclear Engineering, Physics +16

Ranges and electronic stopping powers of 1–24 MeV 12C and 14N ions in Si targets from optical reflectivity measurements on bevelled samples

U. Bussmann, N. Hecking, Klaus Heidemann et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1986 · 17 citations

Engineering, Nuclear Engineering, Optics +8

Refractive index profile measurement techniques by reflectivity profiling: vidicon imaging, beam scanning, and sample scanning

J. Steffen, A. Neyer, E. Voges et al. · Applied Optics · 1990 · 14 citations

Natural Sciences, Materials Science, Physics +15