E. te Kaat

Model of temperature dependent defect interaction and amorphization in crystalline silicon during ion irradiation

N. Hecking, Klaus Heidemann, E. te Kaat · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1986 · 159 citations

Ion Implantation, Crystalline Silicon, Physics +6

High energy Au-implantation into silicon: Radiation damage and microscopical distribution of implanted atoms

J.K.N. Lindner, N. Hecking, E. te Kaat · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1987 · 26 citations

Materials Science, Ion Implantation, Engineering +10

Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeV

H. Kappert, Klaus Heidemann, Daniela Eichholz et al. · Applied Physics A · 1980 · 24 citations

Ion Implantation, Physics, Applied Physics +4

Range and damage profiling after heavy ion implantation in the MeV region

H. Kappert, Klaus Heidemann, Barbro Grabe et al. · physica status solidi (a) · 1978 · 21 citations

Engineering, Radiation Effect, Radiation Exposure +17

Optical characterization of damage and concentration profiles in H ion implanted amorphous silicon

Klaus Heidemann, Matilda Grüner, E. te Kaat · Radiation Effects · 1984 · 21 citations

H Ion, Optical Materials, Engineering +17