Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeV - Concepedia

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Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeV

24

Citations

19

References

1980

Year

H. Kappert, Klaus Heidemann, Daniela Eichholz, E. te Kaat, W. Tothemund

Applied Physics A

Ion ImplantationPhysicsApplied PhysicsSemiconductor Device FabricationVacuum DeviceSilicon On InsulatorRange Straggling

References

	Year	Citations

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