Concepedia
Statistics
Publications
14
Citations
692
H-Index
13
Active since
1971
Affiliations
TU Dortmund University(Current)
IBM (United States)
Fraunhofer Institute for Microelectronic Circuits and Systems
IBM (Brazil)
H. Kappert is an author at TU Dortmund University specializing in materials science, engineering, and semiconductor materials.
Publications per year
1971–2012
Growth and Physical Properties of LPCVD Polycrystalline Silicon Films
G. Harbeke, L. Krausbauer, E. F. Steigmeier et al. · Journal of The Electrochemical Society · 1984 · 245 citations
Natural Sciences, Materials Engineering, Materials Science +17
High quality polysilicon by amorphous low pressure chemical vapor deposition
G. Harbeke, L. Krausbauer, E. F. Steigmeier et al. · Applied Physics Letters · 1983 · 100 citations
Minority carrier lifetime in annealed silicon crystals containing oxygen
Kai Yang, H. Kappert, G. H. Schwuttke · physica status solidi (a) · 1978 · 87 citations
Engineering, Materials Engineering, Materials Science +14
Low-power Single-chip CMOS Potentiostat
R. Kakerow, H. Kappert, Efrat Spiegel et al. · Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95 · 2005 · 72 citations
Engineering, Bioengineering, Chemical Engineering +17
Identification of oxide precipitates in annealed silicon crystals
Kai Yang, Robert E. Anderson, H. Kappert · Applied Physics Letters · 1978 · 28 citations · Full text
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