U. Bussmann

Formation of thin silicon films using low energy oxygen ion implantation

A.K. Robinson, Christopher Marsh, U. Bussmann et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 34 citations

Engineering, Materials Engineering, Materials Science +14

Computer simulation of high fluence oxygen profiles in silicon

U. Bussmann, P.L.F. Hemment · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1990 · 30 citations

Engineering, Materials Science, Physics +12

Ranges and electronic stopping powers of 1–24 MeV 12C and 14N ions in Si targets from optical reflectivity measurements on bevelled samples

U. Bussmann, N. Hecking, Klaus Heidemann et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1986 · 17 citations

Engineering, Nuclear Engineering, Optics +8

Layer thickness calculations for silicon-on-insulator structures formed by oxygen implantation

U. Bussmann, P.L.F. Hemment · Applied Physics Letters · 1990 · 17 citations

Engineering, Materials Engineering, Materials Science +17

Buried insulator formation by nitrogen implantation at elevated temperatures

N. Hatzopoulos, U. Bussmann, A.K. Robinson et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 11 citations

Natural Sciences, Electrical Engineering, Materials Science +8