E.H. Te Kaat - Concepedia

Author

E.H. Te Kaat

TU Dortmund University

Also Known As

E H te Kaat, E. H. Te Kaat, E. H. te Kaat, E.H. Te Kaat, E.H. te Kaat, E.H.Te Kaat

Publications

278

Citations

H-Index

Concepts

All Affiliations

TU Dortmund University Belarusian State University Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute University of Hagen Australian National University

About

E.H. Te Kaat is an author at TU Dortmund University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	234
2	Applied Physics	10	10	212
3	Materials Science	5	5	118
4	Materials Engineering	4	4	82
5	Electrical Engineering	3	3	69

E.H. Te Kaat

Publications

234

Citations

H-Index

Page 1

	Year	Citations
Radiation damage and amorphization of silicon by 2 MeV nitrogen ion implantation J.K.N. Lindner, R. Zuschlag, E.H. Te Kaat Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Electrical EngineeringIon ImplantationEngineeringApplied PhysicsDefect Formation	1992	38
Synthesis of NiSi<sub>2</sub>by 6 MeV Ni implantation into silicon Jörg Lindner, E.H. Te Kaat Journal of materials research/Pratt's guide to venture capital sources Materials EngineeringSemiconductorsMaterials ScienceSemiconductor TechnologyEngineering	1988	38
Radiation damage and amorphization of silicon by 6 MeV Ni ion implantation J.K.N. Lindner, R. Domres, E.H. Te Kaat Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceIon ImplantationEngineeringApplied PhysicsRadiation Damage	1989	28
Characterization of buried silicon-nitride formed by nitrogen implantation Jürgen Belz, E.H. Te Kaat, G. Zimmer, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceIon ImplantationEngineeringApplied PhysicsSemiconductor Device Fabrication	1987	24
Dynamic monte carlo simulation of high dose effects during ion bombardment A. Schönborn, N. Hecking, E.H. Te Kaat Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms EngineeringPhysicsMonte CarloPlasma SimulationNumerical Simulation	1989	22
Ion beam synthesis of deep buried NiSi2 layers in silicon by 6 MeV Ni implantation J.K.N. Lindner, Thomas Klassen, E.H. Te Kaat Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials EngineeringElectrical EngineeringIon ImplantationEngineeringPhysics	1991	20
Ion track doping D. Fink, L.T. Chadderton, S. A. Cruz, Radiation effects and defects in solids EngineeringEnergetic Ion ImplantationIon Beam InstrumentationCharge TransportIon Process	1994	17
Modelling of lattice damage accumulation during high energy ion implantation N. Hecking, E.H. Te Kaat Applied Surface Science Materials EngineeringIon ImplantationDamage MechanismEngineeringCrystalline Defects	1989	13
Ion tracks in condensed carbonaceous matter D. Fink, L.T. Chadderton, S. A. Cruz, Radiation effects and defects in solids EngineeringPhysicsApplied PhysicsIon TracksAtomic Physics	1993	12
Si3N4 crystallization during high temperature nitrogen implantation into silicon U. Bussmann, F.H.J. Meerbach, E.H. Te Kaat Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials EngineeringMaterials ScienceEngineeringApplied PhysicsSi3n4 Crystallization	1989	11

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