K. Wieczorek

First Principle Calculation of the Leakage Current Through $\hbox{SiO}_{2}$ and $\hbox{SiO}_{x}\hbox{N}_{y}$ Gate Dielectrics in MOSFETs

Ebrahim Nadimi, Philipp Plänitz, R. Öttking et al. · IEEE Transactions on Electron Devices · 2010 · 24 citations

Engineering, Electrical Engineering, Physics +17

Taking SOI substrates and low-k dielectrics into high-volume microprocessor production

D. Greenlaw, G. Burbach, Thomas Feudel et al. · 2004 · 19 citations

Engineering, Computer Engineering, Electrical Engineering +17

Extending Two-Element Capacitance Extraction Method Toward Ultraleaky Gate Oxides Using a Short-Channel Length

Jung-Suk Goo, T. Mantei, K. Wieczorek et al. · IEEE Electron Device Letters · 2004 · 13 citations

Engineering, Electrical Engineering, Circuit Theory +16

Tunneling Effective Mass of Electrons in Lightly N-Doped $\hbox{SiO}_{x} \hbox{N}_{y}$ Gate Insulators

Ebrahim Nadimi, Christian Golz, Martin Trentzsch et al. · IEEE Transactions on Electron Devices · 2008 · 13 citations

Engineering, Electrical Engineering, Materials Science +17

In-plane-gate transistors on nonepitaxial silicon directly written by focused-ion-beam implantation

C. Crell, K. Wieczorek, H.-U. Schreiber et al. · Applied Physics Letters · 1996 · 11 citations

Engineering, Electrical Engineering, Electronic Materials +16