Thomas Feudel

22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

R. Carter, J. Mazurier, Luca Pirro et al. · 2016 · 283 citations · Full text

Engineering, Vlsi Design, Radio Frequency +16

Modeling of Damage Accumulation during Ion Implantation into Single‐Crystalline Silicon

M. Posselt, B. Schmidt, Ch. S. N. Murthy et al. · Journal of The Electrochemical Society · 1997 · 64 citations

Materials Science, Electrical Engineering, Ion Implantation +14

Atomistic simulation of ion implantation and its application in Si technology

M. Posselt, Bruno Schmidt, Thomas Feudel et al. · Materials Science and Engineering B · 2000 · 43 citations

Ion Implantation, Engineering, Physics +8

Multiple Stress Memorization In Advanced SOI CMOS Technologies

A. Wei, Maciej Wiatr, A. Mowry et al. · 2007 · 38 citations

Engineering, Vlsi Design, Computer Architecture +16

Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon

Alessandra Alberti, Corrado Bongiorno, Brunella Cafra et al. · Acta Crystallographica Section B Structural Science · 2005 · 27 citations

Materials Science, Materials Engineering, Epitaxial Growth +15