M. Posselt

Atomistic study of intrinsic defect migration in 3C-SiC

Fei Gao, William J. Weber, M. Posselt et al. · Physical Review B · 2004 · 135 citations

Materials Science, Materials Engineering, Semiconductors +13

Crystal-trim and its application to investigations on channeling effects during ion implantation

M. Posselt · Radiation effects and defects in solids · 1994 · 113 citations

Wear, Plasticity, and Rehybridization in Tetrahedral Amorphous Carbon

Tim Kunze, M. Posselt, Sibylle Gemming et al. · Tribology Letters · 2013 · 104 citations · Full text

Materials Science, Tetrahedral Amorphous Carbon, Carbonization +3

Superconducting State in a Gallium-Doped Germanium Layer at Low Temperatures

T. Herrmannsdörfer, V. Heera, O. Ignatchik et al. · Physical Review Letters · 2009 · 91 citations

Superconducting Material, Engineering, Semiconductors +17

Defect-Enhanced Charge Transfer by Ion-Solid Interactions in SiC using Large-Scale<i>Ab Initio</i>Molecular Dynamics Simulations

Fei Gao, Haiyan Xiao, Xiaotao Zu et al. · Physical Review Letters · 2009 · 84 citations

Engineering, Charge Transfer, Stable Defect Formation +19