D.C. Capell

High-power 4H-SiC JBS rectifiers

Ranbir Singh, D.C. Capell, Allen R. Hefner et al. · IEEE Transactions on Electron Devices · 2002 · 83 citations

Junction Barrier Schottky, Electrical Engineering, Engineering +11

Large area, ultra-high voltage 4H-SiC p-i-n rectifiers

Ranbir Singh, K. G. Irvine, D.C. Capell et al. · IEEE Transactions on Electron Devices · 2002 · 69 citations

Large Area, Electrical Engineering, High Temperature Characteristics +11

High temperature high-dose implantation of aluminum in 4H-SiC

N. S. Saks, D.C. Capell · Applied Physics Letters · 2004 · 46 citations

Materials Science, Materials Engineering, Semiconductors +13

High temperature SiC trench gate p-IGBTs

Ranbir Singh, Sei‐Hyung Ryu, D.C. Capell et al. · IEEE Transactions on Electron Devices · 2003 · 40 citations

Materials Engineering, Electrical Engineering, Engineering +11

State of the Art 10 kV NMOS Transistors

Mrinal K. Das, Robert Callanan, D.C. Capell et al. · 2008 · 26 citations

Low-power Electronics, Kv Nmos Transistors, Electrical Engineering +11