Bingxu Ning

Publications

245

Citations

H-Index

2011

Active since

Affiliations

Shanghai Institute of Microsystem and Information Technology(Current)

Chinese Academy of Sciences

Ministry of Industry and Information Technology

University of Chinese Academy of Sciences

Bingxu Ning is an author at Shanghai Institute of Microsystem and Information Technology specializing in applied physics, engineering, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMicroelectronicsNanoelectronicsPhysicsDosimetryDevice ModelingElectronic EngineeringRadiation Protection

Publications per year

2011–2019

Publications

Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

Chao Peng, Zhiyuan Hu, Bingxu Ning et al. · IEEE Electron Device Letters · 2014 · 40 citations

Electrical Engineering, Engineering, Buried Oxide +12

Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETs

Bingxu Ning, Dawei Bi, Huixiang Huang et al. · Microelectronics Reliability · 2012 · 29 citations

Electrical Engineering, Engineering, Rf Semiconductor +8

Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology

Zhiyuan Hu, Zhangli Liu, Hua Shao et al. · IEEE Transactions on Nuclear Science · 2011 · 25 citations

Comprehensive Study, Total Ionizing, Electrical Engineering +15

Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors

Qiwen Zheng, Jiangwei Cui, Liewei Xu et al. · IEEE Transactions on Nuclear Science · 2019 · 22 citations

Electrical Engineering, Total Ionizing Dose, Engineering +10

Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET

Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang et al. · IEEE Transactions on Nuclear Science · 2011 · 18 citations

Device Modeling, Deep Submicron Nmosfet, Electrical Engineering +11

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