Zhengxuan Zhang

Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

Chao Peng, Zhiyuan Hu, Bingxu Ning et al. · IEEE Electron Device Letters · 2014 · 40 citations

Electrical Engineering, Engineering, Buried Oxide +12

Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETs

Bingxu Ning, Dawei Bi, Huixiang Huang et al. · Microelectronics Reliability · 2012 · 29 citations

Electrical Engineering, Engineering, Rf Semiconductor +8

Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology

Zhiyuan Hu, Zhangli Liu, Hua Shao et al. · IEEE Transactions on Nuclear Science · 2011 · 25 citations

Comprehensive Study, Total Ionizing, Electrical Engineering +15

Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET

Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang et al. · IEEE Transactions on Nuclear Science · 2011 · 18 citations

Device Modeling, Deep Submicron Nmosfet, Electrical Engineering +11

Improving Total Dose Tolerance of Buried Oxides in SOI Wafers by Multiple-Step <formula formulatype="inline"><tex Notation="TeX">${\hbox {Si}}^ + $</tex></formula> Implantation

Huixiang Huang, Dawei Bi, Ming Chen et al. · IEEE Transactions on Nuclear Science · 2014 · 15 citations

Materials Science, Soi Wafers, Electrical Engineering +15