Dawei Bi

Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

Chao Peng, Zhiyuan Hu, Bingxu Ning et al. · IEEE Electron Device Letters · 2014 · 40 citations

Electrical Engineering, Engineering, Buried Oxide +12

Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETs

Bingxu Ning, Dawei Bi, Huixiang Huang et al. · Microelectronics Reliability · 2012 · 29 citations

Electrical Engineering, Engineering, Rf Semiconductor +8

Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology

Zhiyuan Hu, Zhangli Liu, Hua Shao et al. · IEEE Transactions on Nuclear Science · 2011 · 25 citations

Comprehensive Study, Total Ionizing, Electrical Engineering +15

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-nm PDSOI I/O nMOSFETs

Xin Xie, Huilong Zhu, Mengying Zhang et al. · IEEE Transactions on Nuclear Science · 2019 · 20 citations

Total Ionizing Dose, Engineering, Analytical Study +16

Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET

Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang et al. · IEEE Transactions on Nuclear Science · 2011 · 18 citations

Device Modeling, Deep Submicron Nmosfet, Electrical Engineering +11