L. Dip

Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 224 citations

Engineering, Electrical Engineering, Materials Science +17

Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 174 citations

Engineering, Electrical Engineering, Materials Science +17

Fermi level pinning at the polySi/metal oxide interface

Chris Hobbs, L.M. Fonseca, V. Dhandapani et al. · 2004 · 111 citations

Engineering, Electrical Engineering, Materials Science +15

Compatibility of silicon gates with hafnium-based gate dielectrics

D. C. Gilmer, R. I. Hegde, R. Cotton et al. · Microelectronic Engineering · 2003 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +14

80 nm poly-Si gate CMOS with HfO/sub 2/ gate dielectric

C. Hobbs, Hsin Tseng, K. Reid et al. · 2002 · 23 citations

Engineering, Electrical Engineering, Materials Science +17