NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors

V. Davidović, Danijel Danković, Aleksandar Ilić, +5

IEEE Transactions on Nuclear Science

Consecutive IrradiationElectrical EngineeringNegative Bias TemperatureEngineeringPhysics +10

Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors

Sandra Veljković, Nikola Mitrović, S. Djoric-Veljković, +9

Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringStress-induced Leakage Current +10

Negative bias temperature instability mechanisms in p-channel power VDMOSFETs

N. Stojadinović, Danijel Danković, S. Djoric-Veljković, +3

Microelectronics Reliability

Electrical EngineeringEngineeringElectronic EngineeringBias Temperature InstabilityP-channel Power Vdmosfets +3

Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs

N. Stojadinović, I. Manić, S. Djoric-Veljković, +3

Microelectronics Reliability

Electrical EngineeringEngineeringStress-induced Leakage CurrentBias Temperature InstabilityApplied Physics +4

Effects of electrical stressing in power VDMOSFETs

N. Stojadinović, I. Manić, V. Davidović, +4

Microelectronics Reliability

Electrical EngineeringEngineeringStress-induced Leakage CurrentBias Temperature InstabilityPower Vdmosfets +2

NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs

Danijel Danković, I. Manić, S. Djoric-Veljković, +3

Microelectronics Reliability

Electrical EngineeringEngineeringNbt Stress-induced DegradationStress-induced Leakage CurrentBias Temperature Instability +6

Negative bias temperature instability in n-channel power VDMOSFETs

Danijel Danković, I. Manić, V. Davidović, +3

Microelectronics Reliability

Electrical EngineeringN-channel Power VdmosfetsEngineeringElectronic EngineeringBias Temperature Instability +3

Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs

N. Stojadinović, I. Manić, S. Djoric-Veljković, +3

Microelectronics Reliability

Electrical EngineeringEngineeringElevated-temperature BiasElectronic EngineeringHigh Electric Field +4

On the Recoverable and Permanent Components of NBTI in p-Channel Power VDMOSFETs

Danijel Danković, I. Manić, V. Davidović, +5

IEEE Transactions on Device and Materials Reliability

EngineeringPower ElectronicsSemiconductor DeviceOxide ChargeElectronic Engineering +14

NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions

I. Manić, Danijel Danković, Aneta Prijić, +5

Microelectronics Reliability

Lifetime EstimationElectrical EngineeringEngineeringNbti Related DegradationStress-induced Leakage Current +8