T. Mohammed-Brahim - Concepedia

Author

T. Mohammed-Brahim

Also Known As

Laboratoire Cristaux et Couches Minces, Faculté des Sciences, Dpt de Physique 1(LESIMS), Université Badji Mokhtar BP.12 Annaba, 23000, Algérie, Mohammed-Brahim, T., Mohammed-Brahim, Tayeb, Simon, Claude, T Mohammed-Brahim, T. Mohammed-Brahim, T. Mohammed-brahim, Taieb Mohammed-Brahim

Publications

345

Citations

H-Index

Concepts

All Affiliations

Université de Rennes Centre National de la Recherche Scientifique Institut d'Électronique et des Technologies du numéRique University of Sciences and Technology Houari Boumediene Universitat de Barcelona

About

T. Mohammed-Brahim is an author at Université de Rennes specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	13	224
2	Applied Physics	11	12	213
3	Electrical Engineering	8	8	136
4	Natural Sciences	2	2	33
5	Computer Engineering	1	1	11

T. Mohammed-Brahim

Publications

224

Citations

H-Index

Page 1

	Year	Citations
Air-gap polycrystalline silicon thin-film transistors for fully integrated sensors H. Mahfoz-Kotb, Anne‐Claire Salaün, T. Mohammed-Brahim, IEEE Electron Device Letters Electrical EngineeringEngineeringSensorsMicrofabricationNanoelectronics	2003	25
Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate M. Fonrodona, D. Soler, Jordi Escarré, Thin Solid Films Materials ScienceElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2005	23
Cw argon laser crystallization of silicon films: Structural properties Jean-François Michaud, Régis Rogel, T. Mohammed-Brahim, Journal of Non-Crystalline Solids Materials ScienceEngineeringOptical PropertiesApplied PhysicsSilicon Films	2006	23
Performance of thin film Transistors on Unhydrogenated <i>In-Situ</i> Doped Polysilicon films Obtained by Solid Phase Crystallization K. Mourgues, F. Raoult, Laurent Pichon, MRS Proceedings Materials ScienceElectrical EngineeringEngineeringElectronic MaterialsApplied Physics	1997	21
Characterization of Deep Energy Levels in Mercuric Iodide T. Mohammed-Brahim, A. Friant, J. Mellet physica status solidi (a) EngineeringPhotoelectric SensorAnalytical InstrumentationOptical DiagnosticsDeep Energy Levels	1983	19
Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization Laurent Pichon, K. Mourgues, F. Raoult, Semiconductor Science and Technology EngineeringSemiconductor MaterialsThin Film Process TechnologySilicon On InsulatorSemiconductor Device	2001	19
Study of the solid phase crystallization behavior of amorphous sputtered silicon by X-ray diffraction and electrical measurements G. Farhi, M. Aoucher, T. Mohammed-Brahim Solar Energy Materials and Solar Cells Materials ScienceEngineeringSilicon On InsulatorX-ray DiffractionApplied Physics	2002	17
Low temperature (≦600°C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays Laurent Pichon, F. Raoult, K. Mourgues, Thin Solid Films Materials ScienceElectrical EngineeringElectronic DevicesEngineeringApplied Physics	1997	16
Effect of the starting amorphous structure on the solid-phase crystallization of silicon T. Mohammed-Brahim, M. Sarret, D. Briand, Philosophical Magazine B Solid-phase CrystallizationEngineeringCrystal Growth TechnologySilicon On InsulatorAmorphous Materials	1997	15
Defect levels in HgI2 and illumination effect T. Mohammed-Brahim physica status solidi (a) Defect LevelsEngineeringPhysicsOptical PropertiesSpectroscopy	1981	14

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