P. Gassot

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Moens, C. Liu, Abhishek Banerjee et al. · 2014 · 106 citations

Engineering, Electrical Engineering, Materials Engineering +17

Next generation of Deep Trench Isolation for Smart Power technologies with 120V high-voltage devices

Rémy Charavel, J. Roig, S. Mouhoubi et al. · Microelectronics Reliability · 2010 · 17 citations

Engineering, Electrical Engineering, Microelectronics +6

Analysis and application of energy capability characterization methods in power MOSFETs

G. Van den bosch, P. Moens, P. Gassot et al. · 2004 · 13 citations

Engineering, Electrical Engineering, Microelectronics +8

Probing the interface fluctuations in semiconductor superlattices using a magneto-transport technique

Flávio Aristone, P. Gassot, J.F. Palmier et al. · Superlattices and Microstructures · 1994 · 13 citations

Natural Sciences, Materials Science, Physics +16

Solutions to improve flatness of Id-Vd curves of rugged nLDMOS

S. Mouhoubi, F. Bauwens, J. Roig et al. · 2011 · 12 citations

Engineering, Electrical Engineering, Electronic Materials +14