R. Mahnkopf - Concepedia

Author

R. Mahnkopf

Infineon Technologies (United States)

Also Known As

R. MAHNKOPF, R. Mahnkopf, Reinhard Mahnkopf

Publications

417

Citations

H-Index

Concepts

All Affiliations

Infineon Technologies (United States)Siemens (Germany)IBM (United States)

About

R. Mahnkopf is an author at Infineon Technologies (United States) specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	369
2	Electrical Engineering	8	8	369
3	Computer Engineering	5	5	265
4	Applied Physics	3	3	104
5	Physics	1	1	13

R. Mahnkopf

Publications

369

Citations

H-Index

Page 1

	Year	Citations
The impact of intra-die device parameter variations on path delays and on the design for yield of low voltage digital circuits Marc-Thomas Eisele, J. Berthold, D. Schmitt‐Landsiedel, IEEE Transactions on Very Large Scale Integration (VLSI) Systems Path Delay VariationsElectrical EngineeringPhysical Design (Electronics)EngineeringVlsi Design	1997	160
Sub-20 nm gate length FinFET design: Can high-&#x03BA; spacers make a difference? Angada B. Sachid, Roswald Francis, Maryam Shojaei Baghini, Electrical EngineeringHigh-kappa SpacersEngineeringVlsi DesignThin Fin Thickness	2008	76
CMOS with active well bias for low-power and RF/analog applications C. Wann, James A. Harrington, Rebecca D. Mih, Low-power ElectronicsHardware SecurityElectrical EngineeringEngineeringVlsi Design	2002	44
A modular 0.13 μm bulk CMOS technology for high performance and low power applications L.-K. Han, S. Biesemans, J. Heidenreich, Low Power ApplicationsEngineeringVlsi DesignComputer ArchitectureHigh Performance	2002	27
Static silicon frequency divider for low power consumption (4 mW, 10 GHz) and high-speed (160 mW, 19 GHz) A. Felder, J. Hauenschild, R. Mahnkopf, Low-power ElectronicsLow Power ConsumptionElectrical EngineeringEngineeringHigh-speed Electronics	2003	21
Hot carrier reliability for 0.13 μm CMOS technology with dual gate oxide thickness Chunxiang Lin, S. Biesemans, L.K. Han, Electrical EngineeringSemiconductor DeviceEngineeringTotal Idsat DegradationNanoelectronics	2002	15
Annealing of degraded npn-transistors-mechanisms and modeling H. Wurzer, R. Mahnkopf, H. Klose IEEE Transactions on Electron Devices EngineeringDegraded Npn-transistorsIntegrated CircuitsSemiconductor DeviceSemiconductors	1994	13
'System on a chip' technology platform for 0.18 μm digital, mixed signal and eDRAM applications R. Mahnkopf, K.-H. Allers, M. Armacost, EngineeringVlsi DesignAnalog DesignChip IntegrationComputer Architecture	2003	13

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