R. Mahnkopf

The impact of intra-die device parameter variations on path delays and on the design for yield of low voltage digital circuits

Marc-Thomas Eisele, J. Berthold, D. Schmitt‐Landsiedel et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 1997 · 160 citations

Path Delay Variations, Electrical Engineering, Physical Design (Electronics) +13

Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?

Angada B. Sachid, Roswald Francis, Maryam Shojaei Baghini et al. · 2008 · 76 citations

Electrical Engineering, High-kappa Spacers, Engineering +9

CMOS with active well bias for low-power and RF/analog applications

C. Wann, James A. Harrington, Rebecca D. Mih et al. · 2002 · 44 citations

Low-power Electronics, Hardware Security, Electrical Engineering +13

A modular 0.13 μm bulk CMOS technology for high performance and low power applications

L.-K. Han, S. Biesemans, J. Heidenreich et al. · 2002 · 27 citations

Low Power Applications, Engineering, Vlsi Design +17

Static silicon frequency divider for low power consumption (4 mW, 10 GHz) and high-speed (160 mW, 19 GHz)

A. Felder, J. Hauenschild, R. Mahnkopf et al. · 2003 · 21 citations

Low-power Electronics, Low Power Consumption, Electrical Engineering +12