M. G. Grimaldi

Compensating impurity effect on epitaxial regrowth rate of amorphized Si

I. Suni, G. Göltz, M. G. Grimaldi et al. · Applied Physics Letters · 1982 · 128 citations

Materials Science, Semiconductors, Ion Implantation +11

Atomic force microscopy study of the growth mechanisms of nanostructured sputtered Au film on Si(111): Evolution with film thickness and annealing time

F. Ruffino, M. G. Grimaldi · Journal of Applied Physics · 2010 · 91 citations · Full text

Engineering, Nanocluster, Room-temperature Sputtering +22

Ion implantation and low-temperature epitaxial regrowth of GaAs

M. G. Grimaldi, B.M. Paine, M.−A. Nicolet et al. · Journal of Applied Physics · 1981 · 90 citations

Materials Science, Semiconductors, Electrical Engineering +13

Ion beam mixing in amorphous silicon I. Experimental investigation

S. Matteson, B.M. Paine, M. G. Grimaldi et al. · Nuclear Instruments and Methods · 1981 · 81 citations

Ion Beam, Ion Implantation, Applied Physics +1

Solute trapping by moving interface in ion-implanted silicon

S. U. Campisano, G. Fóti, P. Baeri et al. · Applied Physics Letters · 1980 · 73 citations

Materials Science, Ion Implantation, Engineering +14