Compensating impurity effect on epitaxial regrowth rate of amorphized Si

Abstract

The epitaxial regrowth of ion-implanted amorphous layers on 〈100〉 Si with partly compensated doping profiles of 11B, 75As, and 31P was studied. Single implants of these impurities are found to increase the regrowth rate at 475 and 500 °C. The compensated layers with equal concentrations of 11B and 31P or 11B and 75As show a strong decrease of the regrowth whereas for the layers with overlapping 75As and 31P profiles no compensation has been found.