G. Göltz

Compensating impurity effect on epitaxial regrowth rate of amorphized Si

I. Suni, G. Göltz, M. G. Grimaldi et al. · Applied Physics Letters · 1982 · 128 citations

Engineering, Materials Engineering, Materials Science +17

Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium

I. Suni, G. Göltz, M‐A. Nicolet et al. · Thin Solid Films · 1982 · 107 citations

Engineering, Materials Engineering, Materials Science +16

Study of atomic jump processes in sodium crystals by quasi-elastic neutron scattering

G. Göltz, A. Heidemann, H. Mehrer et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1980 · 55 citations

Natural Sciences, Chemistry, Physics +14

Kinetics of WSi2 formation at low and high temperatures

J. Lajzérowicz, J. Torrès, G. Göltz et al. · Thin Solid Films · 1986 · 29 citations

Natural Sciences, Chemistry, Materials Science +12

Voids produced by fatigue in copper single crystals of 〈111〉-orientation

P. Kettunen, T. Lepistö, G. Kostorz et al. · Acta Metallurgica · 1981 · 29 citations

Natural Sciences, Materials Engineering, Materials Science +12