Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium - Concepedia

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Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium

107

Citations

16

References

1982

Year

I. Suni, G. Göltz, M‐A. Nicolet, S. S. Lau

Thin Solid Films

Amorphized SiliconPhysicsIntrinsic ImpurityApplied PhysicsSemiconductor Device FabricationEpitaxial Regrowth RateAmorphous SolidSilicon On InsulatorEpitaxial GrowthActive Impurities

References

	Year	Citations

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