B.M. Paine - Concepedia

Author

B.M. Paine

California Institute of Technology ORCID

Also Known As

B M Paine, B. M. PAINE, B. M. Paine, B. Paine, B.M Paine, B.M. PAINE, B.M. Paine, BRUCE M. PAINE, Bruce M Paine, Bruce M. Paine

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

California Institute of Technology Rockwell Automation (United States)University of Southern California HRL Laboratories (United States)University of California San Diego

About

B.M. Paine is an author at California Institute of Technology specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	19	25	1.2K
2	Engineering	17	21	687
3	Electrical Engineering	6	6	202
4	Natural Sciences	4	4	100
5	Chemistry	4	4	92

B.M. Paine

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Ion beam mixing: Basic experiments B.M. Paine, R. S. Averback Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms PhysicsApplied PhysicsIon Beam MixingIon BeamIon Emission	1985	313
(p, γ) Resonance strengths in the s-d shell B.M. Paine, D.G. Sargood Nuclear Physics A Resonance StrengthsPhysicsNuclear Quadrupole ResonanceResonanceAtomic Physics	1979	98
X-ray rocking curve study of Si-implanted GaAs, Si, and Ge V. S. Speriosu, B.M. Paine, M‐A. Nicolet, Applied Physics Letters EngineeringPlastic BehaviorSilicon On InsulatorSemiconductor DeviceSemiconductors	1982	90
Ion implantation and low-temperature epitaxial regrowth of GaAs M. G. Grimaldi, B.M. Paine, M.−A. Nicolet, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringImplantation-induced DisorderEngineering	1981	90
Ion beam mixing in amorphous silicon I. Experimental investigation S. Matteson, B.M. Paine, M. G. Grimaldi, Nuclear Instruments and Methods Ion BeamIon ImplantationApplied PhysicsIon Beam Mixing	1981	81
Ion beam mixing in amorphous silicon II. Theoretical interpretation S. Matteson, B.M. Paine, M.‐A. Nicolet Nuclear Instruments and Methods Ion ImplantationPhysicsApplied PhysicsIon Beam MixingIon Beam	1981	68
HgTe and CdTe epitaxial layers and HgTe–CdTe superlattices grown by laser molecular beam epitaxy J. T. Cheung, G. T. Niizawa, John K. Moyle, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Laser RadiationEngineeringLaser ApplicationsHgte–cdte SuperlatticesSemiconductor Nanostructures	1986	61
Strain in GaAs by low-dose ion implantation B.M. Paine, N. N. Hurvitz, V. S. Speriosu Journal of Applied Physics Room TemperatureIon ImplantationPerpendicular StrainEngineeringCrystalline Defects	1987	47
Measurement of Temperature in GaN HEMTs by Gate End-to-End Resistance B.M. Paine, Thomas Rust, Elizabeth A. Moore IEEE Transactions on Electron Devices Wide-bandgap SemiconductorThermal Barrier ResistanceElectrical EngineeringSemiconductor TechnologyEngineering	2016	39
Lifetesting GaN HEMTs With Multiple Degradation Mechanisms B.M. Paine, Steve R. Polmanter, Vincent T. Ng, IEEE Transactions on Device and Materials Reliability	2015	38

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