M. Simon-Najasek

Publications

175

Citations

H-Index

2012

Active since

Affiliations

Fraunhofer Institute for Microstructure of Materials and Systems(Current)

Fraunhofer Institute for Applied Solid State Physics

Fraunhofer Institute for Mechanics of Materials

M. Simon-Najasek is an author at Fraunhofer Institute for Microstructure of Materials and Systems specializing in applied physics, engineering, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringInstrumentationMicroelectronicsPhysicsMicroscopyMaterial ScienceChemistrySpectroscopy

Publications per year

2012–2021

Publications

Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition

C. Manz, Stefano Leone, Lutz Kirste et al. · Semiconductor Science and Technology · 2021 · 77 citations · Full text

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +12

Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures

M. Simon-Najasek, Susanne Huebner, Frank Altmann et al. · Microelectronics Reliability · 2014 · 22 citations

Materials Science, Engineering, Spectroscopy +3

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications

M. Dammann, M. Baeumler, V. M. Polyakov et al. · Microelectronics Reliability · 2017 · 15 citations

Electrical Engineering, Engineering, Aluminum Gallium Nitride +3

A New Technique for Non-Invasive Short-Localisation in Thin Dielectric Layers by Electron Beam Absorbed Current (EBAC) Imaging

M. Simon-Najasek, Jörg Jatzkowski, Christian U. Große et al. · Proceedings - International Symposium for Testing and Failure Analysis · 2012 · 14 citations

Non-invasive Short-localisation, Engineering, Electron-beam Lithography +19

Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling

Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso et al. · 2020 · 13 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

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