J. Brighten

Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

C.H. Liu, M.T. Lee, Chih‐Yung Lin et al. · 2002 · 44 citations

Materials Engineering, Electrical Engineering, Remote Plasma +13

High performance 50 nm CMOS devices for microprocessor and embedded processor core applications

Shih-Fen Huang, Chih‐Yung Lin, Yu-Shyang Huang et al. · 2002 · 40 citations

Processor Core Applications, Engineering, Vlsi Design +16

The determination of valence band discontinuities in Si/Si1−<i>x</i>Ge<i>x</i>/Si heterojunctions by capacitance-voltage techniques

J. Brighten, I.D. Hawkins, А. R. Peaker et al. · Journal of Applied Physics · 1993 · 31 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Integration of high-performance, low-leakage and mixed signal features into a 100 nm CMOS technology

T. Schafbauer, J. Brighten, Yi-Cheng Chen et al. · 2003 · 22 citations

Low-power Electronics, Electrical Engineering, Engineering +14

The determination of valence band discontinuities and interface charge densities in Si/Si_1-yGe_y/Si heterojunctions

J. Brighten, I.D. Hawkins, А. R. Peaker et al. · Semiconductor Science and Technology · 1993 · 14 citations