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The determination of valence band discontinuities and interface charge densities in Si/Si<sub>1-y</sub>Ge<sub>y</sub>/Si heterojunctions
14
Citations
10
References
1993
Year
The valence band offsets in Si/Si<sub>1-y</sub>Ge<sub>y</sub>/Si strained-layer heterostructures with 0<y<0.14 have been determined by CV measurements and from the analysis of Kroemer. Good agreement is obtained with theoretical predictions of values in the range 0 to 0.1 eV. Extracted interface charge densities are consistent with values deduced from parallel transport measurements in 2DHG structures.
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