T. E. Whall

Evidence for quantum confinement in the photoluminescence of porous Si and SiGe

S. Gardelis, John Rimmer, P. Dawson et al. · Applied Physics Letters · 1991 · 167 citations

Materials Science, Photonics, Quantum Science +15

SiGe heterostructures for FET applications

T. E. Whall, E. H. C. Parker · Journal of Physics D Applied Physics · 1998 · 76 citations

Sige Heterostructures, Semiconductor System, Electrical Engineering +11

Mobility spectrum computational analysis using a maximum entropy approach

Somchai Kiatgamolchai, M. Myronov, O. A. Mironov et al. · Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics · 2002 · 72 citations

Engineering, Network Analysis, Mobility Spectrum +19

Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) <i>p</i>-type modulation-doped heterostructures

M. Myronov, Toshifumi Irisawa, O. A. Mironov et al. · Applied Physics Letters · 2002 · 58 citations · Full text

Semiconductors, Oxide Heterostructures, Semiconductor Technology +13

Scattering mechanisms affecting hole transport in remote-doped Si/SiGe heterostructures

C. J. Emeleus, T. E. Whall, David W. Smith et al. · Journal of Applied Physics · 1993 · 51 citations

Materials Science, Semiconductors, Semiconductor Technology +14