T. E. Whall - Concepedia

Author

T. E. Whall

Also Known As

T E Whall, T Whall, T. E Whall, T. E. WHALL, T. E. Whall, T. Whall, T.E Whall, T.E. Whall, Terence E. Whall, Whall, T. E.

203

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

University of Warwick University of Glasgow University of Southampton University of Cambridge

About

T. E. Whall is an author at University of Warwick specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	75	1.9K
2	Applied Physics	25	68	1.7K
3	Natural Sciences	3	3	112
4	Chemical Engineering	2	2	42
5	Chemistry	1	1	36

T. E. Whall

Publications

Citations

H-Index

Page 1

	Year	Citations
Evidence for quantum confinement in the photoluminescence of porous Si and SiGe S. Gardelis, John Rimmer, P. Dawson, Applied Physics Letters Materials SciencePhotonicsQuantum ScienceQuantum ConfinementSige Layers	1991	167
SiGe heterostructures for FET applications T. E. Whall, E. H. C. Parker Journal of Physics D Applied Physics Sige HeterostructuresSemiconductor SystemElectrical EngineeringEngineeringRf Semiconductor	1998	76
Mobility spectrum computational analysis using a maximum entropy approach Somchai Kiatgamolchai, M. Myronov, O. A. Mironov, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics EngineeringNetwork AnalysisMobility SpectrumMagnetic MaterialsMagnetism	2002	72
Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) <i>p</i>-type modulation-doped heterostructures M. Myronov, Toshifumi Irisawa, O. A. Mironov, Applied Physics Letters SemiconductorsOxide HeterostructuresSemiconductor TechnologyElectronic DevicesRoom-temperature Drift Mobility	2002	58
Scattering mechanisms affecting hole transport in remote-doped Si/SiGe heterostructures C. J. Emeleus, T. E. Whall, David W. Smith, Journal of Applied Physics Materials ScienceSemiconductorsSemiconductor TechnologyBoron NitrideEngineering	1993	51
Spin transport in germanium at room temperature Chengchao Shen, T. Trypiniotis, Kiyoung Lee, Applied Physics Letters MagnetismSpintronicsElectrical EngineeringRoom TemperatureSpin-dependent Transport	2010	47
Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers Michael J. Palmer, G. Braithwaite, T. J. Grasby, Applied Physics Letters Electrical EngineeringEffective MobilitiesEngineeringBuried Sige ChannelNanoelectronics	2001	45
High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth R. J. H. Morris, T. J. Grasby, R. Hammond, Semiconductor Science and Technology SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline Defects	2004	43
<i>p</i>-type delta-doped layers in silicon: Structural and electronic properties N. L. Mattey, Mark Dowsett, E. H. C. Parker, Applied Physics Letters SemiconductorsP-type Delta-doped LayersSemiconductor TechnologyEngineeringCrystalline Defects	1990	37
Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy C. P. Parry, R. A. A. Kubiak, S. M. Newstead, Journal of Applied Physics Materials ScienceSemiconductorsEpitaxial GrowthBoron NitrideEngineering	1992	36

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