C. J. Emeleus

Scattering mechanisms affecting hole transport in remote-doped Si/SiGe heterostructures

C. J. Emeleus, T. E. Whall, David W. Smith et al. · Journal of Applied Physics · 1993 · 51 citations

Materials Science, Semiconductors, Semiconductor Technology +14

Low-temperature electron transport in Si with an MBE-grown Sb δ layer

S. agan, O. A. Mironov, E. H. C. Parker et al. · Physical review. B, Condensed matter · 2001 · 22 citations

Engineering, Charge Transport, Semiconductor Device +17

Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator

Douglas J. Paul, N. Griffin, Danilo Arnone et al. · Applied Physics Letters · 1996 · 22 citations · Full text

Engineering, Low Temperature Characterization, Optoelectronic Devices +18

Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases

D. W. Smith, C. J. Emeleus, R. A. A. Kubiak et al. · Applied Physics Letters · 1992 · 20 citations

Semiconductors, Growth Studies, Electrical Engineering +12

Tuning of the quantum-Hall-effect-state–insulator transition by tilting of magnetic field

S. I. Dorozhkin, C. J. Emeleus, T. E. Whall et al. · Physical review. B, Condensed matter · 1995 · 18 citations

Charge Excitations, Engineering, Longitudinal Field +17