Pil Sung Park

Large area single crystal (0001) oriented MoS2

Masihhur R. Laskar, Lu Ma, Santhakumar Kannappan et al. · Applied Physics Letters · 2013 · 213 citations · Full text

Polarization-engineered GaN/InGaN/GaN tunnel diodes

Sriram Krishnamoorthy, Digbijoy N. Nath, Fatih Akyol et al. · Applied Physics Letters · 2010 · 151 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

Ting-Hsiang Hung, Pil Sung Park, Sriram Krishnamoorthy et al. · IEEE Electron Device Letters · 2014 · 102 citations

Interface Charge Engineering, Electrical Engineering, Charge Excitations +11

Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

Pil Sung Park, Siddharth Rajan · IEEE Transactions on Electron Devices · 2011 · 95 citations

Inverted Structure, Wide-bandgap Semiconductor, Electrical Engineering +13

Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

Sanyam Bajaj, Zhichao Yang, Fatih Akyol et al. · IEEE Transactions on Electron Devices · 2017 · 93 citations

Wide-bandgap Semiconductor, Electrical Engineering, Improved Current +15