Ting-Hsiang Hung

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

Michele Esposto, Sriram Krishnamoorthy, Digbijoy N. Nath et al. · Applied Physics Letters · 2011 · 166 citations · Full text

Materials Science, Al2o3/gan Interface, Electrical Engineering +15

Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

Ting-Hsiang Hung, Pil Sung Park, Sriram Krishnamoorthy et al. · IEEE Electron Device Letters · 2014 · 102 citations

Interface Charge Engineering, Electrical Engineering, Charge Excitations +11

Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

Ting-Hsiang Hung, Sriram Krishnamoorthy, Michele Esposto et al. · Applied Physics Letters · 2013 · 87 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Sanyam Bajaj, Omor Shoron, Pil Sung Park et al. · Applied Physics Letters · 2015 · 86 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors

Ting-Hsiang Hung, Michele Esposto, Siddharth Rajan · Applied Physics Letters · 2011 · 65 citations

Wide-bandgap Semiconductor, Engineering, Dimension Electron Gas +17