P. J. Willadsen

Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

K. Shinohara, D. Regan, A. Corrion et al. · 2011 · 98 citations

Engineering, Electrical Engineering, Materials Science +16

92–96 GHz GaN power amplifiers

M. Micovic, A. Kurdoghlian, A. Margomenos et al. · 2012 · 95 citations

Engineering, Electrical Engineering, Materials Science +17

GaN HFET for W-band Power Applications

M. Micovic, A. Kurdoghlian, P. Hashimoto et al. · 2006 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz

K. Shinohara, D. Regan, I. Milosavljevic et al. · IEEE Electron Device Letters · 2011 · 86 citations

Engineering, Electrical Engineering, Materials Science +16

GaN double ifeterojunction field effect transistor for microwave and millimeterwave power applications

M. Micovic, P. Hashimoto, Ming Hu et al. · 2005 · 84 citations

Engineering, Electrical Engineering, Materials Science +17