Qing Chun Jon Zhang

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Sei‐Hyung Ryu, Brett Hull, Sarit Dhar et al. · Materials science forum · 2010 · 45 citations

Electrical Engineering, 4H-sic Mosfets, Engineering +10

9 kV, 1 cm<sup>2</sup> SiC Gate Turn-Off Thyristors

Anant Agarwal, Qing Chun Jon Zhang, Robert Callanan et al. · Materials science forum · 2010 · 23 citations

Materials Engineering, Basal Plane Dislocation, Electrical Engineering +13

9 kV 4H-SiC IGBTs with 88 mΩ·cm<sup>2</sup> of R <sub>diff, on</sub>

Qing Chun Jon Zhang, Charlotte Jonas, Bradley Heath et al. · Materials science forum · 2007 · 21 citations

Semiconductor Technology, Electrical Engineering, Igbts Feature +13

4H-SiC Trench Schottky Diodes for Next Generation Products

Qing Chun Jon Zhang, Jennifer Duc, V.A. Mieczkowski et al. · Materials science forum · 2013 · 19 citations

Electrical Engineering, Engineering, New Design +10

Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes

Robert E. Stahlbush, Qing Chun Jon Zhang, Anant Agarwal et al. · Materials science forum · 2012 · 16 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +13