Manuel Trejo

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

Gregg H. Jessen, Robert Fitch, J. Gillespie et al. · IEEE Transactions on Electron Devices · 2007 · 334 citations

Engineering, Electrical Engineering, Materials Science +17

High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

Antonio Crespo, Mark Bellot, Kelson D. Chabak et al. · IEEE Electron Device Letters · 2009 · 106 citations

Engineering, Electrical Engineering, Materials Science +17

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

N. Killat, James W. Pomeroy, T. Paskova et al. · IEEE Electron Device Letters · 2012 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

Kelson D. Chabak, J. Gillespie, V. Miller et al. · IEEE Electron Device Letters · 2009 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

Kelson D. Chabak, Dennis E. Walker, Michael R. Johnson et al. · IEEE Electron Device Letters · 2011 · 39 citations

Engineering, Electrical Engineering, Materials Engineering +17