P. Storck

Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

Liesbeth Witters, Hiroaki Arimura, Farid Sebaai et al. · IEEE Transactions on Electron Devices · 2017 · 53 citations

Engineering, Electrical Engineering, Materials Science +15

On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)

Thomas Schroeder, P. Zaumseil, G. Weidner et al. · Journal of Applied Physics · 2006 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +16

Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study

A. Giussani, Peter Rodenbach, P. Zaumseil et al. · Journal of Applied Physics · 2009 · 39 citations

Engineering, Materials Engineering, Materials Science +17

Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction Microscopy

Marvin Hartwig Zoellner, Marie‐Ingrid Richard, Gilbert Chahine et al. · ACS Applied Materials & Interfaces · 2015 · 39 citations · Full text

Engineering, Materials Engineering, Materials Science +17

15nm-W<inf>FIN</inf> high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process

Jérôme Mitard, Liesbeth Witters, Roger Loo et al. · 2014 · 34 citations

Engineering, Electrical Engineering, Materials Science +10