Farid Sebaai

Vertical Ferroelectric HfO<inf>2</inf> FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

Karine Florent, A. Subirats, Kaustuv Banerjee et al. · 2018 · 155 citations

Engineering, Computer Engineering, Electrical Engineering +16

First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers

S. Subramanian, M. Reza Hosseini, T. Chiarella et al. · 2020 · 119 citations

Engineering, Electrical Engineering, Microelectronics +16

InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

Niamh Waldron, Clément Merckling, Lieve Teugels et al. · IEEE Electron Device Letters · 2014 · 98 citations

Engineering, Electrical Engineering, Materials Science +17

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Niamh Waldron, Clément Merckling, Weiming Guo et al. · 2014 · 90 citations

Engineering, Electrical Engineering, Materials Science +15

First Demonstration of Vertically Stacked Gate-All-Around Highly Strained Germanium Nanowire pFETs

E. Capogreco, Liesbeth Witters, Hiroaki Arimura et al. · IEEE Transactions on Electron Devices · 2018 · 60 citations

Engineering, Electrical Engineering, Materials Science +17